 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BCX 71 PNP General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BCX 71 45 V 45 V 5V 250 mW 1) 100 mA 200 mA 200 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 4 V - IC = 10 mA, - IB = 0.25 mA - IC = 50 mA, - IB = 1.25 mA - IEB0 2 Kennwerte (Tj = 25/C) Typ. - - - - - Max. 20 nA 20 :A 20 nA 250 mV 550 mV - ICB0 - ICB0 - - - 60 mV 120 mV Collector saturation volt. - Kollektor-Sattigungsspg. ) - VCEsat - VCEsat 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 58 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.25 mA - IC = 50 mA, - IB = 1.25 mA BCX 71G - VCE = 5 V, - IC = 10 :A BCX 71H BCX 71J BCX 71K BCX 71G - VCE = 5 V, - IC = 2 mA BCX 71H BCX 71J BCX 71K BCX 71G - VCE = 1 V, - IC = 50 mA BCX 71H BCX 71J BCX 71K Base-Emitter voltage - Basis-Emitter-Spannung ) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA - VCE = 1 V, - IC = 50 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking Stempelung BCX 71G = BG BCX 71H = BH F - RthA 2 dB fT CCB0 CEB0 100 MHz - - - 4.5 pF 11 pF - VBEon - VBEon - VBEon - 600 mV - 550 mV 650 mV 720 mV 1 BCX 71 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - - - - - Max. 850 mV 1050 mV - - - - 220 310 460 630 - - - - - 750 mV - - - - - VBEsat - VBEsat 1 600 mV 700 mV - 30 40 100 120 180 250 380 60 80 100 110 DC current gain - Kollektor-Basis-Stromverhaltnis ) hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat 6 dB 420 K/W 2) BCX 70 series BCX 71J = BJ BCX 71K = BK ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 59 |
Price & Availability of BCX71
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |